V001 / JSI / T191


Researchers from Jozef Stefan Institute and National Institute of Chemistry, in collaboration with colleagues from Switzerland and Japan, were the first to identify accumulation of charged defects at domain walls in ferroelectric BiFeO3. This finding explains the p-type hopping conduction at the domain walls in BiFeO3 and thus represents the missing piece for explaining the intriguing electrical properties of domain walls in ferroelectrics. The study was published in Nature Materials with a 2015 impact factor of 38.89, which currently makes it one of the highest-impact scientific journals. (T. Rojac, A. Bencan, G. Drazic, N. Sakamoto, H. Ursic, B. Jancar, G. Tavcar, M. Makarovic, J. Walker, B. Malic in D. Damjanovic; Domain wall conduction in ferroelectric BiFeO3 controlled by accumulation of charged defects. The entire study was conceived and experimentally implemented at the two Slovenian research institutions.