On Monday, 16 May 2016 the group led by Prof. Dr. Dragan Mihailović from department of Complex Matter, Jozef Stefan Institute published an article entitled Fast electronic resistance switching involving hidden charge density wave states in Nature Communications. The article describes the way for electrical control of a new type of memory element with a record speed. Nowadays the speed of memory is the main constraint slowing down supercomputers, which everybody of us is using while surfing Google, Amazon, eBay, etc. Experimental work, in which the main contributors are dr. Igor Vaskivskyi, Ian Mihailović and Damjan Svetin, describes a record fast electrically driven memory element, in which the writing process occurs in just 40 picoseconds. The previous world record was held by an American group. The group of Jozef Stefan Institute improved their record by about 10 times.